A Physics-Based Compact Model for Transition-Metal Dichalcogenides Transistors With the Band-Tail Effect
10.1109/LED.2018.2820142
Saved in:
Main Author: | THEAN VOON YEW, AARON |
---|---|
Other Authors: | ELECTRICAL AND COMPUTER ENGINEERING |
Format: | Article |
Published: |
2020
|
Online Access: | https://scholarbank.nus.edu.sg/handle/10635/184228 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
A surface potential based compact model for two-dimensional field effect transistors with disorders induced transition behaviors
by: THEAN VOON YEW, AARON
Published: (2020) -
Fabrication and characterization of semiconducting transition metal dichalcogenides field effect transistors
by: Ngiam, Lee Hui
Published: (2015) -
KEY ISSUES IN USING TWO-DIMENSIONAL TRANSITION-METAL DICHALCOGENIDES FOR TRANSISTOR APPLICATIONS
by: HUANG BINJIE
Published: (2020) -
Band nesting and the optical response of two-dimensional semiconducting transition metal dichalcogenides
by: Carvalho, A., et al.
Published: (2014) -
Physics-based compact modeling of quasi-ballistic transistors
by: Ajaykumar, Arjun
Published: (2017)