Understanding energy efficiency benefits of carbon nanotube field-effect transistors for digital VLSI

Understanding energy efficiency benefits of carbon nanotube field-effect transistors for digital VLSI

10.1109/TNANO.2018.2871841

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Bibliographic Details
Main Authors:	Hills, G, Bardon, M.G., Doornbos, G., Yakimets, D., Schuddinck, P., Baert, R., Jang, D., Mattii, L., Sherazi, S.M.Y., Rodopoulos, D.Catthoor, F.b Email Author , Raghavan, P.b Email Author , Shulaker, M.M.f Email Author , Wong, H.-S.P.a Email Author , Mitra, S.a Email Author, Ritzenthaler, R., Lee, C.-S., THEAN VOON YEW, AARON, Radu, I., Spessot, A, Debacker, P., Catthoor, F., Raghavan, P., Shulaker, M.M., Wong, H.-S.P., Mitra, S.
Other Authors:	DEPT OF ELECTRICAL & COMPUTER ENGG
Format:	Article
Published:	Institute of Electrical and Electronics Engineers Inc. 2020
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/184413
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Institution:	National University of Singapore

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Summary:	10.1109/TNANO.2018.2871841