Can interface charge enhance selectivity in tunnel layer passivated contacts? Using negatively charged aluminium oxide capped with dopant free PEDOT or boron doped polysilicon

Can interface charge enhance selectivity in tunnel layer passivated contacts? Using negatively charged aluminium oxide capped with dopant free PEDOT or boron doped polysilicon

10.1016/j.solmat.2020.110857

Saved in:
Bibliographic Details
Main Authors: Kaur, G, Dutta, T, Sridharan, R, Zheng, X, Danner, A, Stangl, R
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Published: Elsevier BV 2020
Online Access:https://scholarbank.nus.edu.sg/handle/10635/184480
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
id sg-nus-scholar.10635-184480
record_format dspace
spelling sg-nus-scholar.10635-1844802024-04-25T03:36:16Z Can interface charge enhance selectivity in tunnel layer passivated contacts? Using negatively charged aluminium oxide capped with dopant free PEDOT or boron doped polysilicon Kaur, G Dutta, T Sridharan, R Zheng, X Danner, A Stangl, R ELECTRICAL AND COMPUTER ENGINEERING SOLAR ENERGY RESEARCH INST OF S'PORE 10.1016/j.solmat.2020.110857 Solar Energy Materials and Solar Cells 110857-110857 2020-12-02T10:02:51Z 2020-12-02T10:02:51Z 2020-01-01 2020-12-02T09:51:51Z Article Kaur, G, Dutta, T, Sridharan, R, Zheng, X, Danner, A, Stangl, R (2020-01-01). Can interface charge enhance selectivity in tunnel layer passivated contacts? Using negatively charged aluminium oxide capped with dopant free PEDOT or boron doped polysilicon. Solar Energy Materials and Solar Cells : 110857-110857. ScholarBank@NUS Repository. https://doi.org/10.1016/j.solmat.2020.110857 9270248 https://scholarbank.nus.edu.sg/handle/10635/184480 Elsevier BV Elements
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1016/j.solmat.2020.110857
author2 ELECTRICAL AND COMPUTER ENGINEERING
author_facet ELECTRICAL AND COMPUTER ENGINEERING
Kaur, G
Dutta, T
Sridharan, R
Zheng, X
Danner, A
Stangl, R
format Article
author Kaur, G
Dutta, T
Sridharan, R
Zheng, X
Danner, A
Stangl, R
spellingShingle Kaur, G
Dutta, T
Sridharan, R
Zheng, X
Danner, A
Stangl, R
Can interface charge enhance selectivity in tunnel layer passivated contacts? Using negatively charged aluminium oxide capped with dopant free PEDOT or boron doped polysilicon
author_sort Kaur, G
title Can interface charge enhance selectivity in tunnel layer passivated contacts? Using negatively charged aluminium oxide capped with dopant free PEDOT or boron doped polysilicon
title_short Can interface charge enhance selectivity in tunnel layer passivated contacts? Using negatively charged aluminium oxide capped with dopant free PEDOT or boron doped polysilicon
title_full Can interface charge enhance selectivity in tunnel layer passivated contacts? Using negatively charged aluminium oxide capped with dopant free PEDOT or boron doped polysilicon
title_fullStr Can interface charge enhance selectivity in tunnel layer passivated contacts? Using negatively charged aluminium oxide capped with dopant free PEDOT or boron doped polysilicon
title_full_unstemmed Can interface charge enhance selectivity in tunnel layer passivated contacts? Using negatively charged aluminium oxide capped with dopant free PEDOT or boron doped polysilicon
title_sort can interface charge enhance selectivity in tunnel layer passivated contacts? using negatively charged aluminium oxide capped with dopant free pedot or boron doped polysilicon
publisher Elsevier BV
publishDate 2020
url https://scholarbank.nus.edu.sg/handle/10635/184480
_version_ 1800914739816038400

Similar Items