Design and Study of an Artificial Spiking Neuron Enabled by Low-Voltage SiOx-based ReRAM

Design and Study of an Artificial Spiking Neuron Enabled by Low-Voltage SiOx-based ReRAM

10.1109/S3S46989.2019.9320502

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Bibliographic Details
Main Authors: NIU XUHUA, LI YIDA, THEAN VOON YEW, AARON
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Language:English
Published: IEEE 2021
Subjects:
Spiking Neural Network, Resistive Random Access Memory, Spike-Timing-Dependent Plasticity
Online Access:https://scholarbank.nus.edu.sg/handle/10635/192010
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Institution: National University of Singapore
Language: English
Description
Summary:10.1109/S3S46989.2019.9320502

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