Design and Study of an Artificial Spiking Neuron Enabled by Low-Voltage SiOx-based ReRAM

Design and Study of an Artificial Spiking Neuron Enabled by Low-Voltage SiOx-based ReRAM

10.1109/S3S46989.2019.9320502

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書目詳細資料
Main Authors: NIU XUHUA, LI YIDA, THEAN VOON YEW, AARON
其他作者: ELECTRICAL AND COMPUTER ENGINEERING
格式: Article
語言:English
出版: IEEE 2021
主題:
Spiking Neural Network, Resistive Random Access Memory, Spike-Timing-Dependent Plasticity
在線閱讀:https://scholarbank.nus.edu.sg/handle/10635/192010
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總結:10.1109/S3S46989.2019.9320502

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