Design and Study of an Artificial Spiking Neuron Enabled by Low-Voltage SiOx-based ReRAM

• Main Authors: NIU XUHUA, LI YIDA, THEAN VOON YEW, AARON
• 其他作者: ELECTRICAL AND COMPUTER ENGINEERING
• 格式: Article
• 語言: English
• 出版: IEEE 2021
• 主題: Spiking Neural Network, Resistive Random Access Memory, Spike-Timing-Dependent Plasticity
• 在線閱讀: https://scholarbank.nus.edu.sg/handle/10635/192010

10.1109/S3S46989.2019.9320502