Gate-Defined Quantum Confinement in CVD 2D WS2

• Main Authors: Lau, Chit Siong, Chee, Jing Yee, Cao, Liemao, Ooi, Zi-En, Tong, Shi Wun, Bosman, Michel, Bussolotti, Fabio, Deng, Tianqi, Wu, Gang, Yang, Shuo-Wang, Wang, Tong, Teo, Siew Lang, Wong, Calvin Pei Yu, Chai, Jian Wei, Chen, Li, Zhang, Zhong Ming, Ang, Kah-Wee, Ang, Yee Sin, Goh, Kuan Eng Johnson
• Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
• Format: Article
• Language: English
• Published: WILEY-V C H VERLAG GMBH 2021
• Subjects: Science & Technology; Physical Sciences; Technology; Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter; Chemistry; Science & Technology - Other Topics; Materials Science; Physics; atomic layer deposition; Coulomb blockade; HfO; (2); high-; k dielectric; transition metal dichalcogenides; ATOMIC LAYER DEPOSITION; FIELD-EFFECT TRANSISTORS; VAPOR-PHASE GROWTH; MONOLAYER MOS2; VALLEY POLARIZATION; INTERFACE-ROUGHNESS; TRANSITION; PERFORMANCE; TRANSPORT; MOBILITY
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/202310
• Institution: National University of Singapore

10.1002/adma.202103907