Gate-Defined Quantum Confinement in CVD 2D WS2

Gate-Defined Quantum Confinement in CVD 2D WS2

10.1002/adma.202103907

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Bibliographic Details
Main Authors:	Lau, Chit Siong, Chee, Jing Yee, Cao, Liemao, Ooi, Zi-En, Tong, Shi Wun, Bosman, Michel, Bussolotti, Fabio, Deng, Tianqi, Wu, Gang, Yang, Shuo-Wang, Wang, Tong, Teo, Siew Lang, Wong, Calvin Pei Yu, Chai, Jian Wei, Chen, Li, Zhang, Zhong Ming, Ang, Kah-Wee, Ang, Yee Sin, Goh, Kuan Eng Johnson
Other Authors:	CHEMISTRY
Format:	Article
Language:	English
Published:	WILEY-V C H VERLAG GMBH 2021
Subjects:	Science & Technology Physical Sciences Technology Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics atomic layer deposition Coulomb blockade HfO (2) high- k dielectric transition metal dichalcogenides ATOMIC LAYER DEPOSITION FIELD-EFFECT TRANSISTORS VAPOR-PHASE GROWTH MONOLAYER MOS2 VALLEY POLARIZATION INTERFACE-ROUGHNESS TRANSITION PERFORMANCE TRANSPORT MOBILITY
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/202310
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Institution:	National University of Singapore
Language:	English

Description
Summary:	10.1002/adma.202103907