APA引文

Jia, Y., Wen, Z., Chen, Y., Xie, C., Guo, Y., Xu, Y., & ENGINEERING, E. A. C. (2021). A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs. Institute of Electrical and Electronics Engineers Inc.

Chicago Style Citation

Jia, Y., Z. Wen, Y. Chen, C.-C Xie, Y.-X Guo, Y. Xu, and ELECTRICAL AND COMPUTER ENGINEERING. A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs. Institute of Electrical and Electronics Engineers Inc, 2021.

MLA引文

Jia, Y., et al. A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs. Institute of Electrical and Electronics Engineers Inc, 2021.