In situ-grown compressed NiCo2S4 barrier layer for efficient and durable polysulfide entrapment

In situ-grown compressed NiCo2S4 barrier layer for efficient and durable polysulfide entrapment

10.1038/s41427-019-0159-1

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Bibliographic Details
Main Authors: Huang, S., Wang, Y., Hu, J., Von Lim, Y., Kong, D., Guo, L., Kou, Z., Chen, Y., Yang, H.Y.
Other Authors: MATERIALS SCIENCE AND ENGINEERING
Format: Article
Published: Nature Publishing Group 2022
Online Access:https://scholarbank.nus.edu.sg/handle/10635/212767
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Institution: National University of Singapore
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Summary:10.1038/s41427-019-0159-1

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