Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing

Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing

10.1038/s41699-020-00190-0

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Bibliographic Details
Main Authors: Sifan Li, Bochang Li, FENG XUEWEI, Li Chen, LI YESHENG, Li Huang, Fong Xuanyao, Kah-Wee Ang
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Language:English
Published: Nature 2022
Online Access:https://scholarbank.nus.edu.sg/handle/10635/225296
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Institution: National University of Singapore
Language: English
Description
Summary:10.1038/s41699-020-00190-0

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