Coulomb Blockade in Etched Single- and Few-Layer MoS2 Nanoribbons

ACS APPLIED ELECTRONIC MATERIALS

Saved in:

Bibliographic Details
Main Authors:	Kotekar-Patil, Dharmraj, Deng, Jie, Wong, Swee Liang, Goh, Kuan Eng Johnson
Other Authors:	PHYSICS
Format:	Article
Language:	English
Published:	AMER CHEMICAL SOC 2022
Subjects:	Science & Technology Technology Engineering, Electrical & Electronic Materials Science, Multidisciplinary Engineering Materials Science Coulomb blockade quantum dot single electron transistor monolayer few layer molybdenum disulfide (MoS2) TMDC quantum transport quantum confinement TRANSISTORS PERFORMANCE CONTACTS GRAPHENE ENHANCEMENT CONDUCTANCE TRANSITION CHANNEL DEVICES STATES
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/230041
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-230041
record_format	dspace
spelling	sg-nus-scholar.10635-2300412024-04-17T10:00:14Z Coulomb Blockade in Etched Single- and Few-Layer MoS2 Nanoribbons Kotekar-Patil, Dharmraj Deng, Jie Wong, Swee Liang Goh, Kuan Eng Johnson PHYSICS Science & Technology Technology Engineering, Electrical & Electronic Materials Science, Multidisciplinary Engineering Materials Science Coulomb blockade quantum dot single electron transistor monolayer few layer molybdenum disulfide (MoS2) TMDC quantum transport quantum confinement TRANSISTORS PERFORMANCE CONTACTS GRAPHENE ENHANCEMENT CONDUCTANCE TRANSITION CHANNEL DEVICES STATES ACS APPLIED ELECTRONIC MATERIALS 1 11 2202-2207 2022-08-08T03:48:16Z 2022-08-08T03:48:16Z 2019-11-01 2022-08-06T07:58:18Z Article Kotekar-Patil, Dharmraj, Deng, Jie, Wong, Swee Liang, Goh, Kuan Eng Johnson (2019-11-01). Coulomb Blockade in Etched Single- and Few-Layer MoS2 Nanoribbons. ACS APPLIED ELECTRONIC MATERIALS 1 (11) : 2202-2207. ScholarBank@NUS Repository. 26376113 https://scholarbank.nus.edu.sg/handle/10635/230041 en AMER CHEMICAL SOC Elements
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
language	English
topic	Science & Technology Technology Engineering, Electrical & Electronic Materials Science, Multidisciplinary Engineering Materials Science Coulomb blockade quantum dot single electron transistor monolayer few layer molybdenum disulfide (MoS2) TMDC quantum transport quantum confinement TRANSISTORS PERFORMANCE CONTACTS GRAPHENE ENHANCEMENT CONDUCTANCE TRANSITION CHANNEL DEVICES STATES
spellingShingle	Science & Technology Technology Engineering, Electrical & Electronic Materials Science, Multidisciplinary Engineering Materials Science Coulomb blockade quantum dot single electron transistor monolayer few layer molybdenum disulfide (MoS2) TMDC quantum transport quantum confinement TRANSISTORS PERFORMANCE CONTACTS GRAPHENE ENHANCEMENT CONDUCTANCE TRANSITION CHANNEL DEVICES STATES Kotekar-Patil, Dharmraj Deng, Jie Wong, Swee Liang Goh, Kuan Eng Johnson Coulomb Blockade in Etched Single- and Few-Layer MoS2 Nanoribbons
description	ACS APPLIED ELECTRONIC MATERIALS
author2	PHYSICS
author_facet	PHYSICS Kotekar-Patil, Dharmraj Deng, Jie Wong, Swee Liang Goh, Kuan Eng Johnson
format	Article
author	Kotekar-Patil, Dharmraj Deng, Jie Wong, Swee Liang Goh, Kuan Eng Johnson
author_sort	Kotekar-Patil, Dharmraj
title	Coulomb Blockade in Etched Single- and Few-Layer MoS2 Nanoribbons
title_short	Coulomb Blockade in Etched Single- and Few-Layer MoS2 Nanoribbons
title_full	Coulomb Blockade in Etched Single- and Few-Layer MoS2 Nanoribbons
title_fullStr	Coulomb Blockade in Etched Single- and Few-Layer MoS2 Nanoribbons
title_full_unstemmed	Coulomb Blockade in Etched Single- and Few-Layer MoS2 Nanoribbons
title_sort	coulomb blockade in etched single- and few-layer mos2 nanoribbons
publisher	AMER CHEMICAL SOC
publishDate	2022
url	https://scholarbank.nus.edu.sg/handle/10635/230041
_version_	1800915553930444800

Coulomb Blockade in Etched Single- and Few-Layer MoS2 Nanoribbons

Similar Items