Recent advances in resistive random access memory based on lead halide perovskite

Recent advances in resistive random access memory based on lead halide perovskite

10.1002/inf2.12162

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Bibliographic Details
Main Authors: Di, Jiayu, Du, Jianhui, Lin, Zhenhua, Liu, Shengzhong (Frank), Ouyang, Jianyong, Chang, Jingjing
Other Authors: MATERIALS SCIENCE AND ENGINEERING
Format: Review
Published: Blackwell Publishing Ltd 2022
Online Access:https://scholarbank.nus.edu.sg/handle/10635/233224
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Institution: National University of Singapore

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https://scholarbank.nus.edu.sg/handle/10635/233224

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