Ferroelectric gating of graphene

Ph.D

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Bibliographic Details
Main Author: NI GUANGXIN
Other Authors: PHYSICS
Format: Theses and Dissertations
Language:English
Published: 2012
Subjects:
Online Access:http://scholarbank.nus.edu.sg/handle/10635/35860
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Institution: National University of Singapore
Language: English
id sg-nus-scholar.10635-35860
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spelling sg-nus-scholar.10635-358602015-01-10T17:23:38Z Ferroelectric gating of graphene NI GUANGXIN PHYSICS OZYILMAZ, BARBAROS Mechanical Exfoliated Graphene, CVD Graphene, Ferroelectric Thin Film, Non-volatile Memory, Flexible Transparent Conductor, Nanotransistor Ph.D DOCTOR OF PHILOSOPHY 2012-12-31T18:03:09Z 2012-12-31T18:03:09Z 2012-06-29 Thesis NI GUANGXIN (2012-06-29). Ferroelectric gating of graphene. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/35860 NOT_IN_WOS en
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
language English
topic Mechanical Exfoliated Graphene, CVD Graphene, Ferroelectric Thin Film, Non-volatile Memory, Flexible Transparent Conductor, Nanotransistor
spellingShingle Mechanical Exfoliated Graphene, CVD Graphene, Ferroelectric Thin Film, Non-volatile Memory, Flexible Transparent Conductor, Nanotransistor
NI GUANGXIN
Ferroelectric gating of graphene
description Ph.D
author2 PHYSICS
author_facet PHYSICS
NI GUANGXIN
format Theses and Dissertations
author NI GUANGXIN
author_sort NI GUANGXIN
title Ferroelectric gating of graphene
title_short Ferroelectric gating of graphene
title_full Ferroelectric gating of graphene
title_fullStr Ferroelectric gating of graphene
title_full_unstemmed Ferroelectric gating of graphene
title_sort ferroelectric gating of graphene
publishDate 2012
url http://scholarbank.nus.edu.sg/handle/10635/35860
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