Perpendicular magnetic anisotropy materials for magnetic random access memory applications

Perpendicular magnetic anisotropy materials for magnetic random access memory applications

Ph.D

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Bibliographic Details
Main Author: TAIEBEH TAHMASEBI
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Theses and Dissertations
Language:English
Published: 2013
Subjects:
magnetic random access memory, STT-MRAM,perpendicular magnetic anisotropy, PMA, L10 FePt, Co/Pd multilayers, CoFeB with PMA, MTJ stack, pMTJ
Online Access:http://scholarbank.nus.edu.sg/handle/10635/37907
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Institution: National University of Singapore
Language: English

Internet

http://scholarbank.nus.edu.sg/handle/10635/37907

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