Absorption recovery time reduction in InGaN/GaN quantum well saturable absorbers

• Main Authors: Lin, F., Xiang, N., Chua, S.J., Irshad, A., Roither, S., Pugzlys, A., Baltuska, A., Chen, P., Chow, S.Y.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Article
• 出版: 2014
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/50857

10.1063/1.2924412