Absorption recovery time reduction in InGaN/GaN quantum well saturable absorbers

• Main Authors: Lin, F., Xiang, N., Chua, S.J., Irshad, A., Roither, S., Pugzlys, A., Baltuska, A., Chen, P., Chow, S.Y.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/50857
• Institution: National University of Singapore

10.1063/1.2924412