Strain relaxation in graded InGaN/GaN epilayers grown on sapphire

Strain relaxation in graded InGaN/GaN epilayers grown on sapphire

10.1063/1.1598295

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Bibliographic Details
Main Authors: Song, T.L., Chua, S.J., Fitzgerald, E.A., Chen, P., Tripathy, S.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/57524
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/57524

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