Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8 Ge0.2 buffer

Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8 Ge0.2 buffer

10.1063/1.2769750

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Bibliographic Details
Main Authors: Loh, T.H., Nguyen, H.S., Murthy, R., Yu, M.B., Loh, W.Y., Lo, G.Q., Balasubramanian, N., Kwong, D.L., Wang, J., Lee, S.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/51033
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Institution: National University of Singapore
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Summary:10.1063/1.2769750

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