Erratum: "An organic-based diode-memory device with rectifying property for crossbar memory array applications" (IEEE Electron Device Letters (2009) vol. 30 (5) (487-489)

10.1109/LED.2009.2033735

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Bibliographic Details
Main Authors:	Teo, E.Y.H., Zhang, C., Lim, S.L., Kang, E.-T., Chan, D.S.H., Zhu, C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Others
Published:	2014
Subjects:	Arrays Chemicals Computers Electron devices Laboratories Silicon Switching circuits
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/51278
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-51278
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spelling	sg-nus-scholar.10635-512782023-10-26T09:08:19Z Erratum: "An organic-based diode-memory device with rectifying property for crossbar memory array applications" (IEEE Electron Device Letters (2009) vol. 30 (5) (487-489) Teo, E.Y.H. Zhang, C. Lim, S.L. Kang, E.-T. Chan, D.S.H. Zhu, C. ELECTRICAL & COMPUTER ENGINEERING CHEMICAL & BIOMOLECULAR ENGINEERING Arrays Chemicals Computers Electron devices Laboratories Silicon Switching circuits 10.1109/LED.2009.2033735 IEEE Electron Device Letters 30 11 1218- EDLED 2014-04-24T08:38:31Z 2014-04-24T08:38:31Z 2009 Others Teo, E.Y.H., Zhang, C., Lim, S.L., Kang, E.-T., Chan, D.S.H., Zhu, C. (2009). Erratum: "An organic-based diode-memory device with rectifying property for crossbar memory array applications" (IEEE Electron Device Letters (2009) vol. 30 (5) (487-489). IEEE Electron Device Letters 30 (11) : 1218-. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2033735 07413106 http://scholarbank.nus.edu.sg/handle/10635/51278 000271151500034 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Arrays Chemicals Computers Electron devices Laboratories Silicon Switching circuits
spellingShingle	Arrays Chemicals Computers Electron devices Laboratories Silicon Switching circuits Teo, E.Y.H. Zhang, C. Lim, S.L. Kang, E.-T. Chan, D.S.H. Zhu, C. Erratum: "An organic-based diode-memory device with rectifying property for crossbar memory array applications" (IEEE Electron Device Letters (2009) vol. 30 (5) (487-489)
description	10.1109/LED.2009.2033735
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Teo, E.Y.H. Zhang, C. Lim, S.L. Kang, E.-T. Chan, D.S.H. Zhu, C.
format	Others
author	Teo, E.Y.H. Zhang, C. Lim, S.L. Kang, E.-T. Chan, D.S.H. Zhu, C.
author_sort	Teo, E.Y.H.
title	Erratum: "An organic-based diode-memory device with rectifying property for crossbar memory array applications" (IEEE Electron Device Letters (2009) vol. 30 (5) (487-489)
title_short	Erratum: "An organic-based diode-memory device with rectifying property for crossbar memory array applications" (IEEE Electron Device Letters (2009) vol. 30 (5) (487-489)
title_full	Erratum: "An organic-based diode-memory device with rectifying property for crossbar memory array applications" (IEEE Electron Device Letters (2009) vol. 30 (5) (487-489)
title_fullStr	Erratum: "An organic-based diode-memory device with rectifying property for crossbar memory array applications" (IEEE Electron Device Letters (2009) vol. 30 (5) (487-489)
title_full_unstemmed	Erratum: "An organic-based diode-memory device with rectifying property for crossbar memory array applications" (IEEE Electron Device Letters (2009) vol. 30 (5) (487-489)
title_sort	erratum: "an organic-based diode-memory device with rectifying property for crossbar memory array applications" (ieee electron device letters (2009) vol. 30 (5) (487-489)
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/51278
_version_	1781411667992641536

Erratum: "An organic-based diode-memory device with rectifying property for crossbar memory array applications" (IEEE Electron Device Letters (2009) vol. 30 (5) (487-489)

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