A study of the material loss and other processes involved during annealing of GaN at growth temperatures

A study of the material loss and other processes involved during annealing of GaN at growth temperatures

10.1016/j.cplett.2003.09.019

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Bibliographic Details
Main Authors: Rana, M.A., Osipowicz, T., Choi, H.W., Breese, M.B.H., Chua, S.J.
Other Authors: PHYSICS
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/54826
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Institution: National University of Singapore
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Summary:10.1016/j.cplett.2003.09.019

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