Electrical and proximity-magnetic effects induced quantum Goos-Hänchen shift on the surface of topological insulator

Electrical and proximity-magnetic effects induced quantum Goos-Hänchen shift on the surface of topological insulator

10.1016/j.jmmm.2013.11.044

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Bibliographic Details
Main Authors: Kuai, J., Da, H.X.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Ferromagnetic magnetization
Gate bias
Quantum Goos-Hänchen shift
Topological insulator
Online Access:http://scholarbank.nus.edu.sg/handle/10635/55815
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/55815

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