High- k gate stack on germanium substrate with fluorine incorporation
10.1063/1.2913048
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sg-nus-scholar.10635-561872023-10-26T07:01:08Z High- k gate stack on germanium substrate with fluorine incorporation Xie, R. Yu, M. Lai, M.Y. Chan, L. Zhu, C. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.2913048 Applied Physics Letters 92 16 - APPLA 2014-06-17T02:51:43Z 2014-06-17T02:51:43Z 2008 Article Xie, R., Yu, M., Lai, M.Y., Chan, L., Zhu, C. (2008). High- k gate stack on germanium substrate with fluorine incorporation. Applied Physics Letters 92 (16) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2913048 00036951 http://scholarbank.nus.edu.sg/handle/10635/56187 000255456100078 Scopus |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Xie, R. Yu, M. Lai, M.Y. Chan, L. Zhu, C. |
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Xie, R. Yu, M. Lai, M.Y. Chan, L. Zhu, C. |
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Xie, R. Yu, M. Lai, M.Y. Chan, L. Zhu, C. High- k gate stack on germanium substrate with fluorine incorporation |
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Xie, R. |
title |
High- k gate stack on germanium substrate with fluorine incorporation |
title_short |
High- k gate stack on germanium substrate with fluorine incorporation |
title_full |
High- k gate stack on germanium substrate with fluorine incorporation |
title_fullStr |
High- k gate stack on germanium substrate with fluorine incorporation |
title_full_unstemmed |
High- k gate stack on germanium substrate with fluorine incorporation |
title_sort |
high- k gate stack on germanium substrate with fluorine incorporation |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/56187 |
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