Magnetoresistive behavior of current-perpendicular-to-plane trilayer with half-metal insertions

10.1063/1.2178008

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Bibliographic Details
Main Authors: Bae, S., Tan, S.G., Jalil, M.B.A., Kumar, S.B., Teo, K.L., Leong, Z.Y., Liew, T.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56577
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Institution: National University of Singapore
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Summary:10.1063/1.2178008