Electrical characterisation of metal-thin oxide-silicon tunnel diodes prepared by rapid thermal annealing
Physica Status Solidi (A) Applied Research
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sg-nus-scholar.10635-621142015-04-06T05:01:41Z Electrical characterisation of metal-thin oxide-silicon tunnel diodes prepared by rapid thermal annealing Choi, W.K. Poon, F.W. ELECTRICAL ENGINEERING Physica Status Solidi (A) Applied Research 163 1 129-140 PSSAB 2014-06-17T06:47:33Z 2014-06-17T06:47:33Z 1997-09 Article Choi, W.K.,Poon, F.W. (1997-09). Electrical characterisation of metal-thin oxide-silicon tunnel diodes prepared by rapid thermal annealing. Physica Status Solidi (A) Applied Research 163 (1) : 129-140. ScholarBank@NUS Repository. 00318965 http://scholarbank.nus.edu.sg/handle/10635/62114 NOT_IN_WOS Scopus |
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Physica Status Solidi (A) Applied Research |
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ELECTRICAL ENGINEERING |
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ELECTRICAL ENGINEERING Choi, W.K. Poon, F.W. |
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Choi, W.K. Poon, F.W. |
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Choi, W.K. Poon, F.W. Electrical characterisation of metal-thin oxide-silicon tunnel diodes prepared by rapid thermal annealing |
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Choi, W.K. |
title |
Electrical characterisation of metal-thin oxide-silicon tunnel diodes prepared by rapid thermal annealing |
title_short |
Electrical characterisation of metal-thin oxide-silicon tunnel diodes prepared by rapid thermal annealing |
title_full |
Electrical characterisation of metal-thin oxide-silicon tunnel diodes prepared by rapid thermal annealing |
title_fullStr |
Electrical characterisation of metal-thin oxide-silicon tunnel diodes prepared by rapid thermal annealing |
title_full_unstemmed |
Electrical characterisation of metal-thin oxide-silicon tunnel diodes prepared by rapid thermal annealing |
title_sort |
electrical characterisation of metal-thin oxide-silicon tunnel diodes prepared by rapid thermal annealing |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/62114 |
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