Interface roughness effects on the currents of resonant tunnelling hot electron transistor

Journal of Physics D: Applied Physics

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Bibliographic Details
Main Authors: Sheng, Hanyu, Chua, Soo-Jin
Other Authors: ELECTRICAL ENGINEERING
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/62346
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Institution: National University of Singapore
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Summary:Journal of Physics D: Applied Physics