New hole negative differential resistance strained-layer device
Materials Science and Engineering B
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sg-nus-scholar.10635-624782015-02-28T11:12:16Z New hole negative differential resistance strained-layer device Sheng, H. Chua, S.-J. ELECTRICAL ENGINEERING Gallium arsenide Indium arsenide Quantum well Tunnelling Materials Science and Engineering B 35 1-3 87-89 2014-06-17T06:51:28Z 2014-06-17T06:51:28Z 1995-12 Article Sheng, H.,Chua, S.-J. (1995-12). New hole negative differential resistance strained-layer device. Materials Science and Engineering B 35 (1-3) : 87-89. ScholarBank@NUS Repository. 09215107 http://scholarbank.nus.edu.sg/handle/10635/62478 NOT_IN_WOS Scopus |
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Gallium arsenide Indium arsenide Quantum well Tunnelling |
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Gallium arsenide Indium arsenide Quantum well Tunnelling Sheng, H. Chua, S.-J. New hole negative differential resistance strained-layer device |
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Materials Science and Engineering B |
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ELECTRICAL ENGINEERING |
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ELECTRICAL ENGINEERING Sheng, H. Chua, S.-J. |
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Article |
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Sheng, H. Chua, S.-J. |
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Sheng, H. |
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New hole negative differential resistance strained-layer device |
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New hole negative differential resistance strained-layer device |
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New hole negative differential resistance strained-layer device |
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New hole negative differential resistance strained-layer device |
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New hole negative differential resistance strained-layer device |
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new hole negative differential resistance strained-layer device |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/62478 |
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