New hole negative differential resistance strained-layer device

Materials Science and Engineering B

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Main Authors: Sheng, H., Chua, S.-J.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Subjects:
Online Access:http://scholarbank.nus.edu.sg/handle/10635/62478
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-624782015-02-28T11:12:16Z New hole negative differential resistance strained-layer device Sheng, H. Chua, S.-J. ELECTRICAL ENGINEERING Gallium arsenide Indium arsenide Quantum well Tunnelling Materials Science and Engineering B 35 1-3 87-89 2014-06-17T06:51:28Z 2014-06-17T06:51:28Z 1995-12 Article Sheng, H.,Chua, S.-J. (1995-12). New hole negative differential resistance strained-layer device. Materials Science and Engineering B 35 (1-3) : 87-89. ScholarBank@NUS Repository. 09215107 http://scholarbank.nus.edu.sg/handle/10635/62478 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
topic Gallium arsenide
Indium arsenide
Quantum well
Tunnelling
spellingShingle Gallium arsenide
Indium arsenide
Quantum well
Tunnelling
Sheng, H.
Chua, S.-J.
New hole negative differential resistance strained-layer device
description Materials Science and Engineering B
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Sheng, H.
Chua, S.-J.
format Article
author Sheng, H.
Chua, S.-J.
author_sort Sheng, H.
title New hole negative differential resistance strained-layer device
title_short New hole negative differential resistance strained-layer device
title_full New hole negative differential resistance strained-layer device
title_fullStr New hole negative differential resistance strained-layer device
title_full_unstemmed New hole negative differential resistance strained-layer device
title_sort new hole negative differential resistance strained-layer device
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/62478
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