Yeow, Y., Ling, C., Ah, L., & ENGINEERING, E. (2014). Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurement.
استشهاد بنمط شيكاغوYeow, Y.T., C.H Ling, L.K Ah, و ELECTRICAL ENGINEERING. Observation of MOSFET Degradation Due to Electrical Stressing Through Gate-to-source and Gate-to-drain Capacitance Measurement. 2014.
MLA استشهادYeow, Y.T., C.H Ling, L.K Ah, و ELECTRICAL ENGINEERING. Observation of MOSFET Degradation Due to Electrical Stressing Through Gate-to-source and Gate-to-drain Capacitance Measurement. 2014.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.