Properties of monolithic integration of a resonant tunneling diode and a quantum well laser
Superlattices and Microstructures
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sg-nus-scholar.10635-626582021-10-05T09:51:09Z Properties of monolithic integration of a resonant tunneling diode and a quantum well laser Sheng, H. Chun, S.-J. ELECTRICAL ENGINEERING Superlattices and Microstructures 16 2 157- SUMIE 2014-06-17T06:53:28Z 2014-06-17T06:53:28Z 1994-09 Sheng, H., Chun, S.-J. (1994-09). Properties of monolithic integration of a resonant tunneling diode and a quantum well laser. Superlattices and Microstructures 16 (2) : 157-. ScholarBank@NUS Repository. 07496036 http://scholarbank.nus.edu.sg/handle/10635/62658 A1994QB48700010 Scopus |
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Superlattices and Microstructures |
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ELECTRICAL ENGINEERING |
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ELECTRICAL ENGINEERING Sheng, H. Chun, S.-J. |
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Sheng, H. Chun, S.-J. |
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Sheng, H. Chun, S.-J. Properties of monolithic integration of a resonant tunneling diode and a quantum well laser |
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Sheng, H. |
title |
Properties of monolithic integration of a resonant tunneling diode and a quantum well laser |
title_short |
Properties of monolithic integration of a resonant tunneling diode and a quantum well laser |
title_full |
Properties of monolithic integration of a resonant tunneling diode and a quantum well laser |
title_fullStr |
Properties of monolithic integration of a resonant tunneling diode and a quantum well laser |
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Properties of monolithic integration of a resonant tunneling diode and a quantum well laser |
title_sort |
properties of monolithic integration of a resonant tunneling diode and a quantum well laser |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/62658 |
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