أرسل هذا في رسالة قصيرة: Impact ionization nanowire transistor with multiple-gates, silicon-germanium impact ionization region, and sub-5 mV/decade subtheshold swing

   _____     ___      ______    _____     ______  
  / ___//   / _ \\   /_   _//  |  ___||  /_____// 
  \___ \\  | / \ ||  `-| |,-   | ||__    `____ `  
  /    //  | \_/ ||    | ||    | ||__    /___//   
 /____//    \___//     |_||    |_____||  `__ `    
`-----`     `---`      `-`'    `-----`   /_//     
                                         `-`