Geometry of dimer reconstruction on the C(100), Si(100), and Ge(100) surfaces

Journal of Chemical Physics

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Main Authors:	Yang, C., Chuan Kang, H.
Other Authors:	PHYSICS
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/76248
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-76248
record_format	dspace
spelling	sg-nus-scholar.10635-762482024-11-11T01:23:46Z Geometry of dimer reconstruction on the C(100), Si(100), and Ge(100) surfaces Yang, C. Chuan Kang, H. PHYSICS CHEMISTRY Journal of Chemical Physics 110 22 11029-11037 JCPSA 2014-06-23T05:40:26Z 2014-06-23T05:40:26Z 1999-06-08 Article Yang, C.,Chuan Kang, H. (1999-06-08). Geometry of dimer reconstruction on the C(100), Si(100), and Ge(100) surfaces. Journal of Chemical Physics 110 (22) : 11029-11037. ScholarBank@NUS Repository. 00219606 http://scholarbank.nus.edu.sg/handle/10635/76248 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	Journal of Chemical Physics
author2	PHYSICS
author_facet	PHYSICS Yang, C. Chuan Kang, H.
format	Article
author	Yang, C. Chuan Kang, H.
spellingShingle	Yang, C. Chuan Kang, H. Geometry of dimer reconstruction on the C(100), Si(100), and Ge(100) surfaces
author_sort	Yang, C.
title	Geometry of dimer reconstruction on the C(100), Si(100), and Ge(100) surfaces
title_short	Geometry of dimer reconstruction on the C(100), Si(100), and Ge(100) surfaces
title_full	Geometry of dimer reconstruction on the C(100), Si(100), and Ge(100) surfaces
title_fullStr	Geometry of dimer reconstruction on the C(100), Si(100), and Ge(100) surfaces
title_full_unstemmed	Geometry of dimer reconstruction on the C(100), Si(100), and Ge(100) surfaces
title_sort	geometry of dimer reconstruction on the c(100), si(100), and ge(100) surfaces
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/76248
_version_	1821190844253732864

Geometry of dimer reconstruction on the C(100), Si(100), and Ge(100) surfaces

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