Buried heterostructure InGaAsP/InP strain-compensated multiple quantum well laser with a native-oxidized InAlAs current blocking layer

Buried heterostructure InGaAsP/InP strain-compensated multiple quantum well laser with a native-oxidized InAlAs current blocking layer

10.1063/1.122899

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Bibliographic Details
Main Authors: Wang, Z.J., Chua, S.-J., Zhou, F., Wang, W., Wu, R.H.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80311
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/80311

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