Doping dependence of intersubband transitions in Si1-xGex Si multiple quantum wells

Materials Science and Engineering B

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Bibliographic Details
Main Authors:	Karunasiri, G., Jin Chua, S., Suk Park, J., Wang, K.L.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Subjects:	Doping effects Epitaxial silicon Infrared spectroscopy Quantum well
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/80363
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Institution:	National University of Singapore

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