Electronic structure of (111)-GaAsP/AlGaAs strained-layer quantum wells

Electronic structure of (111)-GaAsP/AlGaAs strained-layer quantum wells

Surface Science

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Bibliographic Details
Main Authors: Zhang, X., Ishikawa, M., Yaguchi, H., Onabe, K.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Subjects:
Photoreflectance spectroscopy
Piezoelctric effect
Quantum well
X-ray diffraction
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80397
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/80397

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