New accurate model for drain-gate avalanche current source of GaAs MESFET

10.1002/(SICI)1098-2760(20000520)25:43.0.CO;2-8

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Bibliographic Details
Main Authors: Xiao, Q., Ooi, B.L., Ma, J.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80788
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Institution: National University of Singapore
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