Numerical study of the dependence of unity gain bandwidth fT on polysilicon emitter in bipolar transistors

COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering

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Main Authors:	Chor, E.F., Tan, I.S.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/80847
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-808472015-03-22T10:04:09Z Numerical study of the dependence of unity gain bandwidth fT on polysilicon emitter in bipolar transistors Chor, E.F. Tan, I.S. ELECTRICAL ENGINEERING COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering 10 4 553-562 CODUD 2014-10-07T03:01:56Z 2014-10-07T03:01:56Z 1991-12 Article Chor, E.F.,Tan, I.S. (1991-12). Numerical study of the dependence of unity gain bandwidth fT on polysilicon emitter in bipolar transistors. COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering 10 (4) : 553-562. ScholarBank@NUS Repository. 1873936095 03321649 http://scholarbank.nus.edu.sg/handle/10635/80847 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Chor, E.F. Tan, I.S.
format	Article
author	Chor, E.F. Tan, I.S.
spellingShingle	Chor, E.F. Tan, I.S. Numerical study of the dependence of unity gain bandwidth fT on polysilicon emitter in bipolar transistors
author_sort	Chor, E.F.
title	Numerical study of the dependence of unity gain bandwidth fT on polysilicon emitter in bipolar transistors
title_short	Numerical study of the dependence of unity gain bandwidth fT on polysilicon emitter in bipolar transistors
title_full	Numerical study of the dependence of unity gain bandwidth fT on polysilicon emitter in bipolar transistors
title_fullStr	Numerical study of the dependence of unity gain bandwidth fT on polysilicon emitter in bipolar transistors
title_full_unstemmed	Numerical study of the dependence of unity gain bandwidth fT on polysilicon emitter in bipolar transistors
title_sort	numerical study of the dependence of unity gain bandwidth ft on polysilicon emitter in bipolar transistors
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/80847
_version_	1681088963617488896

Numerical study of the dependence of unity gain bandwidth fT on polysilicon emitter in bipolar transistors

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