Optical characterization of InAs monolayer quantum structures grown on (311)A, (311)B, and (100) GaAs substrates

Optical characterization of InAs monolayer quantum structures grown on (311)A, (311)B, and (100) GaAs substrates

IEEE Journal on Selected Topics in Quantum Electronics

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Bibliographic Details
Main Authors: Xu, S.J., Chua, S.J., Zhang, X., Zhang, Z.H., Luo, C.P., Yuan, Z.L., Xu, Z.Y., Zhou, J.M.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Subjects:
Photoluminescent materials/devices
Quantum wells
Semiconductor heterojunctions
Semiconductor lasers
Semiconductor measurements
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80897
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/80897

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