Optical spectroscopy study on carrier concentration and mobility in GaN

• Main Authors: Li, Z.-F., Lu, W., Ye, H.-J., Yuan, X.-Z., Shen, X.-C., Li, G., Chua, S.J.
• Other Authors: ELECTRICAL ENGINEERING
• Format: Article
• Published: 2014
• Subjects: α-GaN epitaxy thin film; Carrier contration; IR reflection spectra; LO phonon-plasmon coupling mode; Mobility; Raman spectra
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/80904
• Institution: National University of Singapore

Wuli Xuebao/Acta Physica Sinica