APA引文

Cha, C., Chor, E., Gong, H., Zhang, A., Chan, L., & ENGINEERING, E. (2014). Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices.

Chicago Style Citation

Cha, C.L., E.F Chor, H. Gong, A.Q Zhang, L. Chan, and ELECTRICAL ENGINEERING. Plasma Etching Optimization of Oxide/nitride/oxide Interpoly Dielectric Breakdown Time in Flash Memory Devices. 2014.

MLA引文

Cha, C.L., et al. Plasma Etching Optimization of Oxide/nitride/oxide Interpoly Dielectric Breakdown Time in Flash Memory Devices. 2014.