Quantitative detection of oxygen contamination related traps in gallium arsenide epitaxial layer grown by molecular beam epitaxy at low temperature

Japanese Journal of Applied Physics, Part 2: Letters

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Main Authors: Lau, Wai Shing, Goo, Chuen Hang, Chong, Tow Chong, Chu, Paul K.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81031
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spelling sg-nus-scholar.10635-810312015-02-21T11:54:30Z Quantitative detection of oxygen contamination related traps in gallium arsenide epitaxial layer grown by molecular beam epitaxy at low temperature Lau, Wai Shing Goo, Chuen Hang Chong, Tow Chong Chu, Paul K. ELECTRICAL ENGINEERING Japanese Journal of Applied Physics, Part 2: Letters 32 9 A L1192-L1195 JAPLD 2014-10-07T03:03:55Z 2014-10-07T03:03:55Z 1993-09-01 Article Lau, Wai Shing,Goo, Chuen Hang,Chong, Tow Chong,Chu, Paul K. (1993-09-01). Quantitative detection of oxygen contamination related traps in gallium arsenide epitaxial layer grown by molecular beam epitaxy at low temperature. Japanese Journal of Applied Physics, Part 2: Letters 32 (9 A) : L1192-L1195. ScholarBank@NUS Repository. 00214922 http://scholarbank.nus.edu.sg/handle/10635/81031 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description Japanese Journal of Applied Physics, Part 2: Letters
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Lau, Wai Shing
Goo, Chuen Hang
Chong, Tow Chong
Chu, Paul K.
format Article
author Lau, Wai Shing
Goo, Chuen Hang
Chong, Tow Chong
Chu, Paul K.
spellingShingle Lau, Wai Shing
Goo, Chuen Hang
Chong, Tow Chong
Chu, Paul K.
Quantitative detection of oxygen contamination related traps in gallium arsenide epitaxial layer grown by molecular beam epitaxy at low temperature
author_sort Lau, Wai Shing
title Quantitative detection of oxygen contamination related traps in gallium arsenide epitaxial layer grown by molecular beam epitaxy at low temperature
title_short Quantitative detection of oxygen contamination related traps in gallium arsenide epitaxial layer grown by molecular beam epitaxy at low temperature
title_full Quantitative detection of oxygen contamination related traps in gallium arsenide epitaxial layer grown by molecular beam epitaxy at low temperature
title_fullStr Quantitative detection of oxygen contamination related traps in gallium arsenide epitaxial layer grown by molecular beam epitaxy at low temperature
title_full_unstemmed Quantitative detection of oxygen contamination related traps in gallium arsenide epitaxial layer grown by molecular beam epitaxy at low temperature
title_sort quantitative detection of oxygen contamination related traps in gallium arsenide epitaxial layer grown by molecular beam epitaxy at low temperature
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/81031
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