Temperature quenching of tunable tunneling recombination emission in AlxGa1-xAs n-i-p-i doping structures

Temperature quenching of tunable tunneling recombination emission in AlxGa1-xAs n-i-p-i doping structures

Solid State Communications

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Bibliographic Details
Main Authors: Chua, S.J., Tang, X.H., Xu, S.J.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Subjects:
A. Semiconductor
D. Optical properties
E. Luminescence
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81242
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Institution: National University of Singapore
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