Hot-carrier induced degradation mechanisms of 0.8μm LDD P-MOSFET with 850°C wet gate oxidation
Annual Proceedings - Reliability Physics (Symposium)
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| Format: | Conference or Workshop Item |
| Published: |
2014
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| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/81460 |
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| Institution: | National University of Singapore |