Lee, R., Liow, T., Tan, K., Lim, A., Koh, A., Zhu, M., . . . ENGINEERING, E. &. C. (2014). Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widths.
Chicago Style CitationLee, R.T.-P., et al. Achieving Conduction Band-edge Schottky Barrier Height for Arsenic-segregated Nickel Aluminide Disilicide and Implementation in FinFETs With Ultra-narrow Fin Widths. 2014.
MLA引文Lee, R.T.-P., et al. Achieving Conduction Band-edge Schottky Barrier Height for Arsenic-segregated Nickel Aluminide Disilicide and Implementation in FinFETs With Ultra-narrow Fin Widths. 2014.
警告：這些引文格式不一定是100％准確.