أرسل هذا في رسالة قصيرة: Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widths

 _    _    _    _    _    _    __   __     _____  
| \  / || | || | || | || | ||  \ \\/ //   / ___// 
|  \/  || | || | || | || | ||   \ ` //    \___ \\ 
| .  . || | \\_/ || | \\_/ ||    | ||     /    // 
|_|\/|_||  \____//   \____//     |_||    /____//  
`-`  `-`    `---`     `---`      `-`'   `-----`