An improved effective-mass-theory equation for phosphorus doped in silicon
10.1016/j.ssc.2012.10.023
Saved in:
Main Author: | Hui, H.T. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/81950 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Magnetic and magnetoelectric studies in pure and cation doped BiFeO3
by: Naik, V.B., et al.
Published: (2014) -
Study of surface microtopography of InAlAs/InP heterostructures grown by MBE
by: Taijing, L., et al.
Published: (2014) -
Laser desorption mass spectroscopic study of fullerene coalescence and aggregation in reactive and non-reactive polymer films
by: Ong, P.P., et al.
Published: (2014) -
Spin-injection across a magnetic-electric barrier structure
by: Jiang, Y., et al.
Published: (2014) -
Temperature quenching of tunable tunneling recombination emission in AlxGa1-xAs n-i-p-i doping structures
by: Chua, S.J., et al.
Published: (2014)