APA引文

Chin, S., Seah, D., Lam, K., Samudra, G., Liang, G., & ENGINEERING, E. &. C. (2014). Device physics and characteristics of graphene nanoribbon tunneling FETs.

Chicago Style Citation

Chin, S.-K., D. Seah, K.-T Lam, G.S Samudra, G. Liang, and ELECTRICAL & COMPUTER ENGINEERING. Device Physics and Characteristics of Graphene Nanoribbon Tunneling FETs. 2014.

MLA引文

Chin, S.-K., et al. Device Physics and Characteristics of Graphene Nanoribbon Tunneling FETs. 2014.

警告:這些引文格式不一定是100%准確.