Park, C., Cho, B., & ENGINEERING, E. &. C. (2014). Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning.
Chicago Style CitationPark, C.S., B.J Cho, and ELECTRICAL & COMPUTER ENGINEERING. Dopant-free FUSI PtxSi Metal Gate for High Work Function and Reduced Fermi-level Pinning. 2014.
MLA CitationPark, C.S., B.J Cho, and ELECTRICAL & COMPUTER ENGINEERING. Dopant-free FUSI PtxSi Metal Gate for High Work Function and Reduced Fermi-level Pinning. 2014.
Warning: These citations may not always be 100% accurate.