APA引文

Park, C., Cho, B., & ENGINEERING, E. &. C. (2014). Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning.

Chicago Style Citation

Park, C.S., B.J Cho, and ELECTRICAL & COMPUTER ENGINEERING. Dopant-free FUSI PtxSi Metal Gate for High Work Function and Reduced Fermi-level Pinning. 2014.

MLA引文

Park, C.S., B.J Cho, and ELECTRICAL & COMPUTER ENGINEERING. Dopant-free FUSI PtxSi Metal Gate for High Work Function and Reduced Fermi-level Pinning. 2014.

警告：這些引文格式不一定是100％准確.