Enhanced optical performance of amber emitting quantum dots incorporated InGaN/GaN light-emitting diodes with growth on UV-enhanced electrochemically etched nanoporous GaN

Enhanced optical performance of amber emitting quantum dots incorporated InGaN/GaN light-emitting diodes with growth on UV-enhanced electrochemically etched nanoporous GaN

10.1063/1.3589969

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Bibliographic Details
Main Authors: Soh, C.B., Liu, W., Hartono, H., Ang, N.S.S., Chua, S.J., Chow, S.Y., Tay, C.B., Vajpeyi, A.P.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82287
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/82287

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