High optical quality nanoporous GaN prepared by photoelectrochemical etching

High optical quality nanoporous GaN prepared by photoelectrochemical etching

10.1149/1.1861037

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Bibliographic Details
Main Authors: Vajpeyi, A.P., Chua, S.J., Tripathy, S., Fitzgerald, E.A., Liu, W., Chen, P., Wang, L.S.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82451
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Institution: National University of Singapore
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Summary:10.1149/1.1861037

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