APA引文

Koh, S., Sekar, K., Lee, D., Krull, W., Wang, X., Samudra, G., . . . ENGINEERING, E. &. C. (2014). N-channel MOSFETs with embedded silicon-carbon source/drain stressors formed using cluster-carbon implant and excimer-laser-induced solid phase epitaxy.

Chicago Style Citation

Koh, S.-M., K. Sekar, D. Lee, W. Krull, X. Wang, G.S Samudra, Y.-C Yeo, and ELECTRICAL & COMPUTER ENGINEERING. N-channel MOSFETs With Embedded Silicon-carbon Source/drain Stressors Formed Using Cluster-carbon Implant and Excimer-laser-induced Solid Phase Epitaxy. 2014.

MLA引文

Koh, S.-M., et al. N-channel MOSFETs With Embedded Silicon-carbon Source/drain Stressors Formed Using Cluster-carbon Implant and Excimer-laser-induced Solid Phase Epitaxy. 2014.